HgCdMnZnTe: Growth and physical properties

The results of studying the most important physical properties of a new quinary semiconductor HgCdMnZnTe solid solution are reported. It is shown that the properties of HgCdMnZnTe can make this material highly competitive with HgCdTe, which is the main material for infrared photoelectronics in the s...

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Veröffentlicht in:	Journal of alloys and compounds 2006-10, Vol.423 (1), p.139-143
Hauptverfasser:	Ostapov, S.E., Gorbatyuk, I.N., Dremlyuzhenko, S.G., Zhikharevich, V.V., Rarenko, I.M., Zaplitnyy, R.A., Fodchuk, I.M., Deibuk, V.G., Popenko, N.A., Ivanchenko, I.V., Zhigalov, A.A., Karelin, S.Yu
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Crystal growth Crystal structure Electronic band structure Electronic conduction in metals and alloys Electronic properties Electronic transport in condensed matter Exact sciences and technology Galvanomagnetic and other magnetotransport effects Physics Semiconductors
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	The results of studying the most important physical properties of a new quinary semiconductor HgCdMnZnTe solid solution are reported. It is shown that the properties of HgCdMnZnTe can make this material highly competitive with HgCdTe, which is the main material for infrared photoelectronics in the spectral ranges 3–5 and 8–14 μm.
ISSN:	0925-8388 1873-4669
DOI:	10.1016/j.jallcom.2005.12.057