Characterization of aluminum nitride thin films by ion beam analysis techniques

AlN thin films have been deposited on silicon substrate by vacuum arc discharge technique at different substrate temperatures. The information regarding depth profiling of AlN thin films has been determined by applying both elastic backscattering (EBS) and nuclear reaction analysis (NRA) techniques simultaneously at optimized experimental conditions. Additionally, combined SEM/EDX techniques have been employed to gain further information regarding thickness and composition of the AlN thin films. The Al/N ratio has been determined, while the oxygen content was found to be negligible. The substrate temperature influence on depth profile of AlN thin films as well as densities has been discussed. The advantages of using ion beam analysis techniques have been reviewed. •Ion beams present convenient tools for chemical element depth profiling of AlN thin films.•Optimization of experimental conditions of ion beam render reliable results.•Depth profile information of AlN thin films shows stoichiometric chemical element ratio.•Applying optimized heat to the substrate initiates AlN thin films with density similar to AlN bulk material.