Growth by atomic layer epitaxy and characterization of thin films of ZnO

Growth by atomic layer epitaxy and characterization of thin films of ZnO

ABSTRACT Atomic layer epitaxy (ALE) was applied to grow thin films of monocrystalline and polycrystalline ZnO. Monocrystalline films were obtained only for GaN/Al2O3 substrates, whereas use of sapphire, silicon or soda lime glass resulted in either 3D growth mode or in polycrystalline films showing...

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Veröffentlicht in:Physica status solidi. C 2005-01, Vol.2 (3), p.1125-1130
Hauptverfasser: Kopalko, K., Wójcik, A., Godlewski, M., Łusakowska, E., Paszkowicz, W., Domagała, J.Z., Godlewski, M.M., Szczerbakow, A., Świątek, K., Dybko, K.
Format: Artikel
Sprache:eng
Schlagworte:
68.55.Jk
68.55.Ln
68.55.Nq
78.66.Hf
81.15.Kk
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Beschreibung
Zusammenfassung:ABSTRACT Atomic layer epitaxy (ALE) was applied to grow thin films of monocrystalline and polycrystalline ZnO. Monocrystalline films were obtained only for GaN/Al2O3 substrates, whereas use of sapphire, silicon or soda lime glass resulted in either 3D growth mode or in polycrystalline films showing preferential orientation along the c axis. Successful Mn doping of ZnO films is reported, when using organic Mn precursors. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:1610-1634
1610-1642
DOI:10.1002/pssc.200460660