Fabrication of high power RF MEMS switches

High power RF MEMS switches have been designed and fabricated. The switches are composed of a matrix of ohmic contact cantilevers and bridges. Optimized fabrication processes have been developed to improve planarization on contact surface and reduce residual stress in switch beams, which ensure a re...

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Veröffentlicht in:	Microelectronic engineering 2006-04, Vol.83 (4), p.1418-1420
Hauptverfasser:	Wang, Ling, Cui, Zheng, Hong, Jia-Sheng, McErlean, Eamon P., Greed, Robert B., Voyce, Daniel C.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Electronics Exact sciences and technology Interfaces Membrane residual stress MEMS Micro- and nanoelectromechanical devices (mems/nems) Planarization RF switches Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Beschreibung
Zusammenfassung:	High power RF MEMS switches have been designed and fabricated. The switches are composed of a matrix of ohmic contact cantilevers and bridges. Optimized fabrication processes have been developed to improve planarization on contact surface and reduce residual stress in switch beams, which ensure a reasonable flat and smooth cantilever and membrane bridge for operation at high RF power and low actuation voltage.
ISSN:	0167-9317 1873-5568
DOI:	10.1016/j.mee.2006.01.067