Advanced electronic and optoelectronic materials by Atomic Layer Deposition: An overview with special emphasis on recent progress in processing of high-k dielectrics and other oxide materials

The principle and practice of Atomic Layer Deposition (ALD) are described with special emphasis on the advantages of the method for processing of thin films for advanced applications in electronics, catalysis and sensor technology. The examples of ALD‐processed materials include ZrO2 and other high‐...

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Veröffentlicht in:Physica status solidi. A, Applied research Applied research, 2004-05, Vol.201 (7), p.1443-1452
Hauptverfasser: Niinistö, L., Nieminen, M., Päiväsaari, J., Niinistö, J., Putkonen, M.
Format: Artikel
Sprache:eng
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Zusammenfassung:The principle and practice of Atomic Layer Deposition (ALD) are described with special emphasis on the advantages of the method for processing of thin films for advanced applications in electronics, catalysis and sensor technology. The examples of ALD‐processed materials include ZrO2 and other high‐k dielectrics especially the rare earth oxides, SnO2 for gas sensors and ZnO for optoelectronics. The various precursor chemistries leading to these materials are discussed. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:0031-8965
1521-396X
DOI:10.1002/pssa.200406798