Dynamics of STO heteroepitaxial growth by pulsed laser deposition

The heteroepitaxial growth dynamics of STO thin films on (100) LaAlO3 substrate by pulsed laser deposition has been studied. The laser energy density was found to be an important factor to determine the growth mechanics. High laser energy density is benefit to two dimensional layer-by-layer growth....

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Veröffentlicht in:	Journal of materials science 2005-10, Vol.40 (19), p.5139-5145
Hauptverfasser:	LIU, X. Z, HE, S. M, LI, D. H, LU, Q. F, WANG, Z. H, BAO, S. X, LI, Y. R
Format:	Artikel
Sprache:	eng
Schlagworte:	Adatoms Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Dynamics Energy density Exact sciences and technology Flat surfaces Flux density Grains Island growth Laser deposition Lasers Materials science Methods of deposition of films and coatings film growth and epitaxy Nucleation Partial pressure Physics Pulsed laser deposition Pulsed lasers Structure and morphology thickness Substrates Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties) Thin film structure and morphology Thin films
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Zusammenfassung:	The heteroepitaxial growth dynamics of STO thin films on (100) LaAlO3 substrate by pulsed laser deposition has been studied. The laser energy density was found to be an important factor to determine the growth mechanics. High laser energy density is benefit to two dimensional layer-by-layer growth. Island growth prevails at low substrate temperature. STO thin films deposited at low oxygen partial pressure showed pellicular square grains. High oxygen partial pressure resulted in spherical STO grains. Step-terrace on substrate surface acts as a preferential nucleation site for adatoms, which leads to step-flow growth. STO thin films with atomic flat surface has been prepared on step-terraced substrate.
ISSN:	0022-2461 1573-4803
DOI:	10.1007/s10853-005-4403-4