Fabrication and characterization of silicon carbide field-emitter array

Fabrication and characterization of silicon carbide field-emitter array

Field emitter arrays of 6H crystalline silicon carbide have been fabricated successfully. The fabrication is discussed in detail; critical steps are the use of Ni/Ti mask dots and the sharpening by oxidation. By repetitive oxidation steps tip radii of

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Veröffentlicht in:Microelectronic engineering 2004-06, Vol.73, p.106-110
Hauptverfasser: van Zuuk, A., Heerkens, C.Th.H., van Veen, A.H.V., Teepen, T.F., Wieland, M.J., Groening, O., Kruit, P.
Format: Artikel
Sprache:eng
Schlagworte:
Silicon carbide field emitter tip array
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Beschreibung
Zusammenfassung:Field emitter arrays of 6H crystalline silicon carbide have been fabricated successfully. The fabrication is discussed in detail; critical steps are the use of Ni/Ti mask dots and the sharpening by oxidation. By repetitive oxidation steps tip radii of
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2004.02.024