Excitation energy dependence of photoluminescence in polycrystalline GaN films by post-nitridation technique
Polycrystalline gallium nitride (GaN) films were prepared on (0001) sapphire substrates by post-nitridation technique. The photoluminescence (PL) spectra of the films show a blue emission (BL) and an ultraviolet emission (UV) at room temperature. We tentatively explain the blue emission in our nomin...
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| Veröffentlicht in: | Diamond and related materials 2004-10, Vol.13 (10), p.1892-1894 |
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| container_end_page | 1894 |
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| container_issue | 10 |
| container_start_page | 1892 |
| container_title | Diamond and related materials |
| container_volume | 13 |
| creator | Ma, Hong-Lei Yang, Ying-Ge Ma, Jin Liu, Xiao-Mei |
| description | Polycrystalline gallium nitride (GaN) films were prepared on (0001) sapphire substrates by post-nitridation technique. The photoluminescence (PL) spectra of the films show a blue emission (BL) and an ultraviolet emission (UV) at room temperature. We tentatively explain the blue emission in our nominally undoped GaN films with a model of donor–acceptor pair (DAP) transition. It is suggested that the donor is attributed to oxygen and carbon acts as an acceptor. Continuous blueshift of emission peaks with increasing excitation energy is observed. |
| doi_str_mv | 10.1016/j.diamond.2004.06.008 |
| format | Article |
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The photoluminescence (PL) spectra of the films show a blue emission (BL) and an ultraviolet emission (UV) at room temperature. We tentatively explain the blue emission in our nominally undoped GaN films with a model of donor–acceptor pair (DAP) transition. It is suggested that the donor is attributed to oxygen and carbon acts as an acceptor. Continuous blueshift of emission peaks with increasing excitation energy is observed.</description><identifier>ISSN: 0925-9635</identifier><identifier>EISSN: 1879-0062</identifier><identifier>DOI: 10.1016/j.diamond.2004.06.008</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Blue emission ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Exact sciences and technology ; GaN films ; Iii-v semiconductors ; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation ; Photoluminescence ; Physics</subject><ispartof>Diamond and related materials, 2004-10, Vol.13 (10), p.1892-1894</ispartof><rights>2004 Elsevier B.V.</rights><rights>2005 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c399t-1663839af19f06b694b6f2fb91d19897fff8268995f372ae3c7d466f755f322f3</citedby><cites>FETCH-LOGICAL-c399t-1663839af19f06b694b6f2fb91d19897fff8268995f372ae3c7d466f755f322f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0925963504002134$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=16082718$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Ma, Hong-Lei</creatorcontrib><creatorcontrib>Yang, Ying-Ge</creatorcontrib><creatorcontrib>Ma, Jin</creatorcontrib><creatorcontrib>Liu, Xiao-Mei</creatorcontrib><title>Excitation energy dependence of photoluminescence in polycrystalline GaN films by post-nitridation technique</title><title>Diamond and related materials</title><description>Polycrystalline gallium nitride (GaN) films were prepared on (0001) sapphire substrates by post-nitridation technique. The photoluminescence (PL) spectra of the films show a blue emission (BL) and an ultraviolet emission (UV) at room temperature. We tentatively explain the blue emission in our nominally undoped GaN films with a model of donor–acceptor pair (DAP) transition. It is suggested that the donor is attributed to oxygen and carbon acts as an acceptor. Continuous blueshift of emission peaks with increasing excitation energy is observed.</description><subject>Blue emission</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Exact sciences and technology</subject><subject>GaN films</subject><subject>Iii-v semiconductors</subject><subject>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</subject><subject>Photoluminescence</subject><subject>Physics</subject><issn>0925-9635</issn><issn>1879-0062</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2004</creationdate><recordtype>article</recordtype><recordid>eNqFkU9r3DAQxUVJoZu0H6HgS3KzM5JtWTqVENK0ENJLexZa_Wm0yJIraUP87aPNLvSY08Cb38wb5iH0FUOHAdPrXaednGPQHQEYOqAdAPuANphNvAWg5AxtgJOx5bQfP6HznHcAmPABb5C_e1GuyOJiaEww6e_aaLOYoE1Qpom2WZ5iiX4_u2CyehNdaJboV5XWXKT3tdHcy8fGOj_nZrvWZi5tcCU5fdxbjHoK7t_efEYfrfTZfDnVC_Tn-93v2x_tw6_7n7c3D63qOS8tprRnPZcWcwt0S_mwpZbYLccac8Ynay0jlHE-2n4i0vRq0gOldhqrQIjtL9DVce-SYrXNRcyuHu-9DCbusyCc4IEP8D7IGO7xRCo4HkGVYs7JWLEkN8u0CgziEILYiVMI4hCCACpqCHXu8mQgs5LeJhmUy_-HKTAy4QP37ciZ-pZnZ5LIyh2-rV0yqggd3TtOrx9poag</recordid><startdate>20041001</startdate><enddate>20041001</enddate><creator>Ma, Hong-Lei</creator><creator>Yang, Ying-Ge</creator><creator>Ma, Jin</creator><creator>Liu, Xiao-Mei</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>7SR</scope><scope>7U5</scope><scope>JG9</scope></search><sort><creationdate>20041001</creationdate><title>Excitation energy dependence of photoluminescence in polycrystalline GaN films by post-nitridation technique</title><author>Ma, Hong-Lei ; Yang, Ying-Ge ; Ma, Jin ; Liu, Xiao-Mei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c399t-1663839af19f06b694b6f2fb91d19897fff8268995f372ae3c7d466f755f322f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2004</creationdate><topic>Blue emission</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Exact sciences and technology</topic><topic>GaN films</topic><topic>Iii-v semiconductors</topic><topic>Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation</topic><topic>Photoluminescence</topic><topic>Physics</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ma, Hong-Lei</creatorcontrib><creatorcontrib>Yang, Ying-Ge</creatorcontrib><creatorcontrib>Ma, Jin</creatorcontrib><creatorcontrib>Liu, Xiao-Mei</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Materials Research Database</collection><jtitle>Diamond and related materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ma, Hong-Lei</au><au>Yang, Ying-Ge</au><au>Ma, Jin</au><au>Liu, Xiao-Mei</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Excitation energy dependence of photoluminescence in polycrystalline GaN films by post-nitridation technique</atitle><jtitle>Diamond and related materials</jtitle><date>2004-10-01</date><risdate>2004</risdate><volume>13</volume><issue>10</issue><spage>1892</spage><epage>1894</epage><pages>1892-1894</pages><issn>0925-9635</issn><eissn>1879-0062</eissn><abstract>Polycrystalline gallium nitride (GaN) films were prepared on (0001) sapphire substrates by post-nitridation technique. The photoluminescence (PL) spectra of the films show a blue emission (BL) and an ultraviolet emission (UV) at room temperature. We tentatively explain the blue emission in our nominally undoped GaN films with a model of donor–acceptor pair (DAP) transition. It is suggested that the donor is attributed to oxygen and carbon acts as an acceptor. Continuous blueshift of emission peaks with increasing excitation energy is observed.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.diamond.2004.06.008</doi><tpages>3</tpages></addata></record> |
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| language | eng |
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| source | Elsevier ScienceDirect Journals |
| subjects | Blue emission Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology GaN films Iii-v semiconductors Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Physics |
| title | Excitation energy dependence of photoluminescence in polycrystalline GaN films by post-nitridation technique |
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