Excitation energy dependence of photoluminescence in polycrystalline GaN films by post-nitridation technique

Polycrystalline gallium nitride (GaN) films were prepared on (0001) sapphire substrates by post-nitridation technique. The photoluminescence (PL) spectra of the films show a blue emission (BL) and an ultraviolet emission (UV) at room temperature. We tentatively explain the blue emission in our nomin...

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Veröffentlicht in:	Diamond and related materials 2004-10, Vol.13 (10), p.1892-1894
Hauptverfasser:	Ma, Hong-Lei, Yang, Ying-Ge, Ma, Jin, Liu, Xiao-Mei
Format:	Artikel
Sprache:	eng
Schlagworte:	Blue emission Condensed matter: electronic structure, electrical, magnetic, and optical properties Exact sciences and technology GaN films Iii-v semiconductors Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Physics
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Beschreibung
Zusammenfassung:	Polycrystalline gallium nitride (GaN) films were prepared on (0001) sapphire substrates by post-nitridation technique. The photoluminescence (PL) spectra of the films show a blue emission (BL) and an ultraviolet emission (UV) at room temperature. We tentatively explain the blue emission in our nominally undoped GaN films with a model of donor–acceptor pair (DAP) transition. It is suggested that the donor is attributed to oxygen and carbon acts as an acceptor. Continuous blueshift of emission peaks with increasing excitation energy is observed.
ISSN:	0925-9635 1879-0062
DOI:	10.1016/j.diamond.2004.06.008