Study on Gas Sensing Properties of WO3 Thin Films

Tungsten oxide thin films were prepared by an inorganic-sol-gel dip-coating process, where the sol was obtained by adding citric acid, as chelating agent, to the ammonia solution of tungstic acid. The resultant thin films were a mixture of monoclinic and tetragonal phases of WO3 and, after being pre...

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Veröffentlicht in:Key Engineering Materials 2005-01, Vol.280-283, p.319-322
Hauptverfasser: Jiang, Miao, Xu, Ting Xian, Hou, Feng, Xu, Ming Xia
Format: Artikel
Sprache:eng
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Zusammenfassung:Tungsten oxide thin films were prepared by an inorganic-sol-gel dip-coating process, where the sol was obtained by adding citric acid, as chelating agent, to the ammonia solution of tungstic acid. The resultant thin films were a mixture of monoclinic and tetragonal phases of WO3 and, after being pretreated at 600°C and sintered at 650°C, the average grain size of the polycrystalline films was about 500 nm. The gas-sensing properties of WO3 thin films were tested at temperatures ranging from 500° to 600°C and in nitrogen gas containing 5vol% O2 or 5vol% H2. The WO3 sensors exhibited a good sensitivity and response speed at the temperature of 550°C.
ISSN:1013-9826
1662-9795
1662-9795
DOI:10.4028/www.scientific.net/KEM.280-283.319