Deposition of CeO2 Films on Si(100) Substrates by Electron Beam Evaporation

Thin films of cerium dioxide were deposited on silicon (100) substrates using e‐beam evaporation. The influence of different technological parameters, such as the substrate temperature, the oxygen pressure and the beam power on the crystallographic orientation of the films was explored. By optimizin...

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Veröffentlicht in:	Plasma processes and polymers 2006-02, Vol.3 (2), p.197-200
Hauptverfasser:	Djanovski, Georgi, Beshkova, Milena, Velinova, Sonia, Mollov, Dimitar, Vlaev, Petko, Kovacheva, Daniela, Vutova, Katia, Mladenov, Georgi
Format:	Artikel
Sprache:	eng
Schlagworte:	CeO2 Cross-disciplinary physics: materials science rheology e-beam evaporation (EBE) epitaxy Exact sciences and technology Ion and electron beam-assisted deposition ion plating Materials science Methods of deposition of films and coatings film growth and epitaxy nanostructures Physics scanning electron microscopy (SEM) XRD
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