Deposition of CeO2 Films on Si(100) Substrates by Electron Beam Evaporation

Thin films of cerium dioxide were deposited on silicon (100) substrates using e‐beam evaporation. The influence of different technological parameters, such as the substrate temperature, the oxygen pressure and the beam power on the crystallographic orientation of the films was explored. By optimizin...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Plasma processes and polymers 2006-02, Vol.3 (2), p.197-200
Hauptverfasser:	Djanovski, Georgi, Beshkova, Milena, Velinova, Sonia, Mollov, Dimitar, Vlaev, Petko, Kovacheva, Daniela, Vutova, Katia, Mladenov, Georgi
Format:	Artikel
Sprache:	eng
Schlagworte:	CeO2 Cross-disciplinary physics: materials science rheology e-beam evaporation (EBE) epitaxy Exact sciences and technology Ion and electron beam-assisted deposition ion plating Materials science Methods of deposition of films and coatings film growth and epitaxy nanostructures Physics scanning electron microscopy (SEM) XRD
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Thin films of cerium dioxide were deposited on silicon (100) substrates using e‐beam evaporation. The influence of different technological parameters, such as the substrate temperature, the oxygen pressure and the beam power on the crystallographic orientation of the films was explored. By optimizing these parameters, CeO2 thin films with a strongly preferred (200) orientation could be deposited on Si(100) substrates. XRD patterns of the CeO2 thin films deposited at various temperatures.
ISSN:	1612-8850 1612-8869
DOI:	10.1002/ppap.200500095