Diffused p-n GaAs junctions with nano/microrelief active interface

The technology of a submicron p+‐GaAs layer formation on nano/microtextured n ‐GaAs substrate by a low‐temperature (550 °C) diffusion of Zn is elaborated aimed at ensuring both improved optical and good electronic properties of a textured p‐n junction for the photodiode and solar cells (SC) application. The optical, photoelectric and electrical characteristics of the obtained photodiode structures were studied as a function of the surface microrelief morphology of dendritic or quasigrating type, preliminary processing and the process diffusion duration. Different diffusion conditions were shown to be optimal to obtain maximal improving SC efficiency for structure with different microrelief morphology. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)