High‐Performance Monolithic 3D Integrated Complementary Inverters Based on Monolayer n‐MoS2 and p‐WSe2

Herein, the structure of integrated M3D inverters are successfully demonstrated where a chemical vapor deposition (CVD) synthesized monolayer WSe2 p‐type nanosheet FET is vertically integrated on top of CVD synthesized monolayer MoS2 n‐type film FET arrays (2.5 × 2.5 cm) by semiconductor industry te...

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Veröffentlicht in:	Small (Weinheim an der Bergstrasse, Germany) Germany), 2024-04, Vol.20 (17), p.e2307728-n/a
Hauptverfasser:	Liu, Ming‐Jin, Lan, Wei‐Jie, Huang, Cai‐Syuan, Chen, Chang‐Zhi, Cyu, Ruei‐Hong, Sino, Paul Albert L., Yang, Yu‐Lun, Chiu, Po‐Wen, Chuang, Feng‐Chuan, Shen, Chang‐Hong, Chen, Jyun‐Hong, Chueh, Yu‐Lun
Format:	Artikel
Sprache:	eng
Schlagworte:	2D TMDs Chemical synthesis Chemical vapor deposition Integrated circuits Inverters Low temperature Molybdenum disulfide Monolayers monolithic 3D MOS devices MoS2 Plasma etching Power consumption Statistical analysis Thermal decomposition Voltage gain WSe2
Online-Zugang:	Volltext
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