Optical properties and photoconductivity of amorphous silicon carbon nitride thin film and its application for UV detection
Optical properties of amorphous silicon carbon nitride thin films as a function of carbon content have been studied by the spectral micro-reflectometry. The compositions of a-SiCN thin films deposited with different CH 4 flow rates were analyzed by X-ray photoemission spectroscopy (XPS). It was foun...
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| Veröffentlicht in: | Diamond and related materials 2005-03, Vol.14 (3), p.1010-1013 |
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| creator | Chen, C.W. Huang, C.C. Lin, Y.Y. Chen, L.C. Chen, K.H. Su, W.F. |
| description | Optical properties of amorphous silicon carbon nitride thin films as a function of carbon content have been studied by the spectral micro-reflectometry. The compositions of a-SiCN thin films deposited with different CH
4 flow rates were analyzed by X-ray photoemission spectroscopy (XPS). It was found that the transmittance of a-SiCN thin films decreases with the increasing carbon content; the index of refraction
n varies from ∼2.0 to ∼2.2 and the optical gap (Tauc gap)
E
opt value progressively decreases from 4.1 to 3.3 eV while the carbon content changes from 0 to 25% in the films. In addition, a MSM (metal-semiconductor-metal) photodetector device based on the a-SiCN thin film demonstrates excellent selective sensing features with a large photo-to-dark current ratio about 1800 under illumination of the 250 nm UV light source, providing potential applications for low-cost UV detection. |
| doi_str_mv | 10.1016/j.diamond.2004.11.027 |
| format | Article |
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4 flow rates were analyzed by X-ray photoemission spectroscopy (XPS). It was found that the transmittance of a-SiCN thin films decreases with the increasing carbon content; the index of refraction
n varies from ∼2.0 to ∼2.2 and the optical gap (Tauc gap)
E
opt value progressively decreases from 4.1 to 3.3 eV while the carbon content changes from 0 to 25% in the films. In addition, a MSM (metal-semiconductor-metal) photodetector device based on the a-SiCN thin film demonstrates excellent selective sensing features with a large photo-to-dark current ratio about 1800 under illumination of the 250 nm UV light source, providing potential applications for low-cost UV detection.</description><identifier>ISSN: 0925-9635</identifier><identifier>EISSN: 1879-0062</identifier><identifier>DOI: 10.1016/j.diamond.2004.11.027</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Amorphous silicon carbon nitride ; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) ; Condensed matter: electronic structure, electrical, magnetic, and optical properties ; Cross-disciplinary physics: materials science; rheology ; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures ; Electronic transport phenomena in thin films and low-dimensional structures ; Exact sciences and technology ; Materials science ; Methods of deposition of films and coatings; film growth and epitaxy ; MSM ; Optical band gap ; Photoconduction and photovoltaic effects ; Photoconduction and photovoltaic effects; photodielectric effects ; Physics ; UV detector</subject><ispartof>Diamond and related materials, 2005-03, Vol.14 (3), p.1010-1013</ispartof><rights>2004 Elsevier B.V.</rights><rights>2005 INIST-CNRS</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c483t-a4bd41ba03a022c215c6ae7ab11cc9d735333ec93d16582815961419e2b9913c3</citedby><cites>FETCH-LOGICAL-c483t-a4bd41ba03a022c215c6ae7ab11cc9d735333ec93d16582815961419e2b9913c3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0925963504004297$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>309,310,314,776,780,785,786,3537,23909,23910,25118,27901,27902,65306</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=16828035$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Chen, C.W.</creatorcontrib><creatorcontrib>Huang, C.C.</creatorcontrib><creatorcontrib>Lin, Y.Y.</creatorcontrib><creatorcontrib>Chen, L.C.</creatorcontrib><creatorcontrib>Chen, K.H.</creatorcontrib><creatorcontrib>Su, W.F.</creatorcontrib><title>Optical properties and photoconductivity of amorphous silicon carbon nitride thin film and its application for UV detection</title><title>Diamond and related materials</title><description>Optical properties of amorphous silicon carbon nitride thin films as a function of carbon content have been studied by the spectral micro-reflectometry. The compositions of a-SiCN thin films deposited with different CH
4 flow rates were analyzed by X-ray photoemission spectroscopy (XPS). It was found that the transmittance of a-SiCN thin films decreases with the increasing carbon content; the index of refraction
n varies from ∼2.0 to ∼2.2 and the optical gap (Tauc gap)
E
opt value progressively decreases from 4.1 to 3.3 eV while the carbon content changes from 0 to 25% in the films. In addition, a MSM (metal-semiconductor-metal) photodetector device based on the a-SiCN thin film demonstrates excellent selective sensing features with a large photo-to-dark current ratio about 1800 under illumination of the 250 nm UV light source, providing potential applications for low-cost UV detection.</description><subject>Amorphous silicon carbon nitride</subject><subject>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</subject><subject>Condensed matter: electronic structure, electrical, magnetic, and optical properties</subject><subject>Cross-disciplinary physics: materials science; rheology</subject><subject>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</subject><subject>Electronic transport phenomena in thin films and low-dimensional structures</subject><subject>Exact sciences and technology</subject><subject>Materials science</subject><subject>Methods of deposition of films and coatings; film growth and epitaxy</subject><subject>MSM</subject><subject>Optical band gap</subject><subject>Photoconduction and photovoltaic effects</subject><subject>Photoconduction and photovoltaic effects; photodielectric effects</subject><subject>Physics</subject><subject>UV detector</subject><issn>0925-9635</issn><issn>1879-0062</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNqFkEFr3DAQhUVpodttf0JBl_ZmRyPZXutUSmjaQiCXpFchj8ZkFq_tStpA6J-vNrvQY08Dmjfv6X1CfARVg4Lual8H9odlDrVWqqkBaqV3r8QG-p2tlOr0a7FRVreV7Uz7VrxLaa8UaNvARvy5WzOjn-Qal5ViZkrSz0Guj0tesHgeMfMT52e5jLKExLI4Jpl44rKV6ONQxsw5ciCZH3mWI0-HFw_OxWtdi9JnLqpxifLhlwyUCU8P78Wb0U-JPlzmVjzcfLu__lHd3n3_ef31tsKmN7nyzRAaGLwyXmmNGlrsPO38AIBow860xhhCawJ0ba97aG0HDVjSg7Vg0GzF57Nv6fj7SCm7AyekafIzlTJOW-jVyWYr2rMQ45JSpNGtkQ8-PjtQ7oTa7d0FtTuhdgCuoC53ny4BPhWWY_Qzcvp33JVfqRf_L2cdlbZPTNElZJqRAseCxIWF_5P0F9zsmWI</recordid><startdate>20050301</startdate><enddate>20050301</enddate><creator>Chen, C.W.</creator><creator>Huang, C.C.</creator><creator>Lin, Y.Y.</creator><creator>Chen, L.C.</creator><creator>Chen, K.H.</creator><creator>Su, W.F.</creator><general>Elsevier B.V</general><general>Elsevier</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20050301</creationdate><title>Optical properties and photoconductivity of amorphous silicon carbon nitride thin film and its application for UV detection</title><author>Chen, C.W. ; Huang, C.C. ; Lin, Y.Y. ; Chen, L.C. ; Chen, K.H. ; Su, W.F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c483t-a4bd41ba03a022c215c6ae7ab11cc9d735333ec93d16582815961419e2b9913c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Amorphous silicon carbon nitride</topic><topic>Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)</topic><topic>Condensed matter: electronic structure, electrical, magnetic, and optical properties</topic><topic>Cross-disciplinary physics: materials science; rheology</topic><topic>Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures</topic><topic>Electronic transport phenomena in thin films and low-dimensional structures</topic><topic>Exact sciences and technology</topic><topic>Materials science</topic><topic>Methods of deposition of films and coatings; film growth and epitaxy</topic><topic>MSM</topic><topic>Optical band gap</topic><topic>Photoconduction and photovoltaic effects</topic><topic>Photoconduction and photovoltaic effects; photodielectric effects</topic><topic>Physics</topic><topic>UV detector</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chen, C.W.</creatorcontrib><creatorcontrib>Huang, C.C.</creatorcontrib><creatorcontrib>Lin, Y.Y.</creatorcontrib><creatorcontrib>Chen, L.C.</creatorcontrib><creatorcontrib>Chen, K.H.</creatorcontrib><creatorcontrib>Su, W.F.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Diamond and related materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chen, C.W.</au><au>Huang, C.C.</au><au>Lin, Y.Y.</au><au>Chen, L.C.</au><au>Chen, K.H.</au><au>Su, W.F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Optical properties and photoconductivity of amorphous silicon carbon nitride thin film and its application for UV detection</atitle><jtitle>Diamond and related materials</jtitle><date>2005-03-01</date><risdate>2005</risdate><volume>14</volume><issue>3</issue><spage>1010</spage><epage>1013</epage><pages>1010-1013</pages><issn>0925-9635</issn><eissn>1879-0062</eissn><abstract>Optical properties of amorphous silicon carbon nitride thin films as a function of carbon content have been studied by the spectral micro-reflectometry. The compositions of a-SiCN thin films deposited with different CH
4 flow rates were analyzed by X-ray photoemission spectroscopy (XPS). It was found that the transmittance of a-SiCN thin films decreases with the increasing carbon content; the index of refraction
n varies from ∼2.0 to ∼2.2 and the optical gap (Tauc gap)
E
opt value progressively decreases from 4.1 to 3.3 eV while the carbon content changes from 0 to 25% in the films. In addition, a MSM (metal-semiconductor-metal) photodetector device based on the a-SiCN thin film demonstrates excellent selective sensing features with a large photo-to-dark current ratio about 1800 under illumination of the 250 nm UV light source, providing potential applications for low-cost UV detection.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.diamond.2004.11.027</doi><tpages>4</tpages><oa>free_for_read</oa></addata></record> |
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| source | Elsevier ScienceDirect Journals |
| subjects | Amorphous silicon carbon nitride Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.) Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures Electronic transport phenomena in thin films and low-dimensional structures Exact sciences and technology Materials science Methods of deposition of films and coatings film growth and epitaxy MSM Optical band gap Photoconduction and photovoltaic effects Photoconduction and photovoltaic effects photodielectric effects Physics UV detector |
| title | Optical properties and photoconductivity of amorphous silicon carbon nitride thin film and its application for UV detection |
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