New Achievements on CVD Based Methods for SiC Epitaxial Growth

The results of a new epitaxial process using an industrial 6x2” wafer reactor with the introduction of HCl during the growth have been reported. A complete reduction of silicon nucleation in the gas phase has been observed even for high silicon dilution parameters (Si/H2>0.05) and an increase of...

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Veröffentlicht in:	Materials Science Forum 2005-05, Vol.483-485, p.67-72
Hauptverfasser:	La Via, Francesco, Crippa, Danilo, Veneroni, Alessandro, Zamolo, L., Giannazzo, G., Ruggiero, Alfonso, Mauceri, Marco, Leone, Stefano, Abbondanza, Giuseppe, Di Franco, Salvatore, Abbagnale, G., Roccaforte, Fabrizio, Neri, L., Reitano, Ricardo, Omarini, Fabrizio, Foti, Gaetano, Masi, Maurizio, Pistone, Giuseppe, Valente, Gian Luca, Calcagno, Lucia
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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