New Achievements on CVD Based Methods for SiC Epitaxial Growth

The results of a new epitaxial process using an industrial 6x2” wafer reactor with the introduction of HCl during the growth have been reported. A complete reduction of silicon nucleation in the gas phase has been observed even for high silicon dilution parameters (Si/H2>0.05) and an increase of...

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Veröffentlicht in:Materials Science Forum 2005-05, Vol.483-485, p.67-72
Hauptverfasser: La Via, Francesco, Crippa, Danilo, Veneroni, Alessandro, Zamolo, L., Giannazzo, G., Ruggiero, Alfonso, Mauceri, Marco, Leone, Stefano, Abbondanza, Giuseppe, Di Franco, Salvatore, Abbagnale, G., Roccaforte, Fabrizio, Neri, L., Reitano, Ricardo, Omarini, Fabrizio, Foti, Gaetano, Masi, Maurizio, Pistone, Giuseppe, Valente, Gian Luca, Calcagno, Lucia
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Sprache:eng
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Zusammenfassung:The results of a new epitaxial process using an industrial 6x2” wafer reactor with the introduction of HCl during the growth have been reported. A complete reduction of silicon nucleation in the gas phase has been observed even for high silicon dilution parameters (Si/H2>0.05) and an increase of the growth rate until about 20 µm/h has been measured. No difference has been observed in terms of defects, doping uniformity (average maximum variation 8%) and thickness uniformity (average maximum variation 1.2 %) with respect to the standard process without HCl.
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/www.scientific.net/MSF.483-485.67