A new model of noise characteristics of SiC Schottky barrier MESFET with deep impurity levels and traps
Noise characteristics of silicon carbide Schottky barrier field effect transistors (MESFET) are examined for the case of the operation in small-signal regime and the presence of deep impurity levels and electron traps in the band gap of the channel. A new model of calculations of noise is suggested....
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| Veröffentlicht in: | Applied surface science 2006-05, Vol.252 (15), p.5445-5448 |
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| container_title | Applied surface science |
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| creator | Aroutiounian, V.M. Avetisyan, G.A. Buniatyan, V.V. Soukiassian, P.G. Buniatyan, Vaz.V. |
| description | Noise characteristics of silicon carbide Schottky barrier field effect transistors (MESFET) are examined for the case of the operation in small-signal regime and the presence of deep impurity levels and electron traps in the band gap of the channel. A new model of calculations of noise is suggested. It is shown that the noise measure of the short channel MESFET can be decreased within certain high frequency range. |
| doi_str_mv | 10.1016/j.apsusc.2005.12.050 |
| format | Article |
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| ispartof | Applied surface science, 2006-05, Vol.252 (15), p.5445-5448 |
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| language | eng |
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| source | Elsevier ScienceDirect Journals |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Deep levels Exact sciences and technology Field effect transistor Noise characteristic Physics Schottky barrier Traps |
| title | A new model of noise characteristics of SiC Schottky barrier MESFET with deep impurity levels and traps |
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