A new model of noise characteristics of SiC Schottky barrier MESFET with deep impurity levels and traps

Noise characteristics of silicon carbide Schottky barrier field effect transistors (MESFET) are examined for the case of the operation in small-signal regime and the presence of deep impurity levels and electron traps in the band gap of the channel. A new model of calculations of noise is suggested....

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Veröffentlicht in:	Applied surface science 2006-05, Vol.252 (15), p.5445-5448
Hauptverfasser:	Aroutiounian, V.M., Avetisyan, G.A., Buniatyan, V.V., Soukiassian, P.G., Buniatyan, Vaz.V.
Format:	Artikel
Sprache:	eng
Schlagworte:	Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Deep levels Exact sciences and technology Field effect transistor Noise characteristic Physics Schottky barrier Traps
Online-Zugang:	Volltext
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Beschreibung
Zusammenfassung:	Noise characteristics of silicon carbide Schottky barrier field effect transistors (MESFET) are examined for the case of the operation in small-signal regime and the presence of deep impurity levels and electron traps in the band gap of the channel. A new model of calculations of noise is suggested. It is shown that the noise measure of the short channel MESFET can be decreased within certain high frequency range.
ISSN:	0169-4332 1873-5584
DOI:	10.1016/j.apsusc.2005.12.050