Radical-Beam Gettering Epitaxy of ZnO Films under UV Irradiation

Radical-Beam Gettering Epitaxy of ZnO Films under UV Irradiation

Single-crystal ZnO films are grown by radical-beam gettering epitaxy: annealing of single-crystal zinc chalcogenide (ZnS, ZnSe, or ZnTe) substrates in a flow of oxygen atoms (radicals) and gettering of zinc atoms from the substrate bulk. The effect of UV irradiation during film growth on the structu...

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Veröffentlicht in:Inorganic materials 2005-06, Vol.41 (6), p.604-608
Hauptverfasser: Georgobiani, A. N., Kotlyarevsky, M. B., Rogozin, I. V., Marakhovskii, A. V.
Format: Artikel
Sprache:eng
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Zusammenfassung:Single-crystal ZnO films are grown by radical-beam gettering epitaxy: annealing of single-crystal zinc chalcogenide (ZnS, ZnSe, or ZnTe) substrates in a flow of oxygen atoms (radicals) and gettering of zinc atoms from the substrate bulk. The effect of UV irradiation during film growth on the structure and quality of the resulting ZnO films and the effect of ion implantation into the substrate on the growth of ZnO/ZnSe heterostructures are studied. The conditions are established for the growth of p-type ZnO films.
ISSN:0020-1685
1608-3172
DOI:10.1007/s10789-005-0177-y