Computer Simulations for Processing Plasmas
In this paper, some of our modeling efforts for processing plasmas are presented. We make use of fluid models or particle‐in‐cell–Monte Carlo (PIC‐MC) simulations for the plasma behavior, depending on the application. Fluid models are most suitable to describe the detailed plasma chemistry, like the...
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Veröffentlicht in: | Plasma processes and polymers 2006-02, Vol.3 (2), p.110-119 |
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Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | In this paper, some of our modeling efforts for processing plasmas are presented. We make use of fluid models or particle‐in‐cell–Monte Carlo (PIC‐MC) simulations for the plasma behavior, depending on the application. Fluid models are most suitable to describe the detailed plasma chemistry, like the formation and growth of nanoparticles in so‐called dusty plasmas, and for dielectric barrier discharges (DBDs) at atmospheric pressure. PIC‐MC simulations are the best choice to describe magnetron discharges, operating at low pressure, and for dealing with the plasma dynamics in single‐ and dual‐frequency rf discharges. Finally, we also apply molecular dynamics (MD) simulations for plasma‐surface interaction, more specifically for the plasma deposition of diamond‐like carbon (DLC) films.
Calculated potential distribution and electron density profile in the magnetron discharge. |
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ISSN: | 1612-8850 1612-8869 |
DOI: | 10.1002/ppap.200500065 |