Composite Platinum/Silicon Dioxide Films Deposited using CVD

We report the low temperature deposition of platinum/silicon dioxide composite films from tetraethylorthosilicate (TEOS) and platinum acetylacetonate (Pt(acac)2). The simultaneous CVD of TEOS and Pt(acac)2, in the presence of oxygen, has been shown to reduce the decomposition temperature of TEOS to as low as 320 °C (from 600 °C without Pt(acac)2). Composite films were grown at temperatures ranging from 300 °C to 440 °C, using an estimated 5:1 flow rate of TEOS to Pt(acac)2 and in 0–70% oxygen atmosphere. The overall growth rate was maximized at 400 °C and the overall activation energy of the thin film formation was ∼80 kJ mol–1. The SiO2 phase was amorphous and the platinum phase crystalline with an average grain size of 9 nm as determined by X‐ray diffraction (XRD). An in‐situ Fourier‐transform infrared (FTIR) spectroscopy study of the gas phase was undertaken to provide confirmation of the low temperature decomposition of TEOS promoted by Pt(acac)2. Despite the high Si/Pt ratio in the feed, the maximum observed Si/Pt ratio in the film was 1:1, suggesting a cooperative TEOS‐Pt(acac)2 decomposition mechanism. Low‐temperature deposition of Pt/SiO2 composite films from tetraethylorthosilicate (TEOS) and platinum acetylacetonate (Pt(acac)2) is demonstrated. Films were grown at temperatures of 300–440 °C, using a 5:1 flow rate of TEOS to Pt(acac)2 and in 0–70% oxygen atmosphere. The overall growth rate was maximized at 400 °C and the overall activation energy of the thin film formation was ∼80 kJ mol–1. The SiO2 phase was amorphous and the platinum phase crystalline Despite the high Si/Pt ratio in the feed, the maximum observed Si/Pt ratio in the film was 1:1, suggesting a cooperative TEOS/Pt(acac)2 decomposition mechanism.