Considerable improvement of optical property of GaInNAs/GaAs quantum well

We have found that antimony (Sb) plays an important role for the improvement of optical properties of the GaInNAs/GaAs quantum well in the 1.3 μm region grown by metalorganic vapor-phase epitaxy. Non-annealed samples grown with pre-flow of trimethylantimony (TMSb) showed good optical properties equi...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	Journal of crystal growth 2004-12, Vol.272 (1), p.760-764
Hauptverfasser:	Ishizuka, Takashi, Yamada, Takashi, Iguchi, Yasuhiro, Saito, Tadashi, Katsuyama, Tsukuru, Takagishi, Shigenori
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Interface A3. Organometallic vapor phase epitaxy A3. Quantum wells B1. Nitrides B2. Semiconducting III–V materials Cold working, work hardening annealing, post-deformation annealing, quenching, tempering recovery, and crystallization Cold working, work hardening annealing, quenching, tempering, recovery, and recrystallization textures Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Iii-v semiconductors Materials science Nanoscale materials and structures: fabrication and characterization Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Physics Quantum wells Treatment of materials and its effects on microstructure and properties
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	We have found that antimony (Sb) plays an important role for the improvement of optical properties of the GaInNAs/GaAs quantum well in the 1.3 μm region grown by metalorganic vapor-phase epitaxy. Non-annealed samples grown with pre-flow of trimethylantimony (TMSb) showed good optical properties equivalent to that of annealed samples grown without TMSb. These samples showed higher tolerance to thermal annealing and maintained good photoluminescence (PL) intensity up to 720 °C. The atomic force microscope image showed the improvement of surface smoothness. These results suggest supplying TMSb only before the growth of the quantum well is effective for the improvement of interface between GaInNAs and GaAs.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/j.jcrysgro.2004.08.053