Composition, photoelectric properties, and electroluminescence of the SiGe/Si heterostructures with self-assembled nanoclusters grown by molecular beam epitaxy with vapor Ge source

The photoelectric properties and electroluminescence of the p-i-n diodes based on SiGe/Si heterostructures with self-assembled SiGe nanoclusters grown by Molecular Beam Epitaxy with vapor Ge source have been studied. The composition of the SiGe nanoclusters was studied by a new method of Scanning Au...

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Bibliographische Detailangaben

Hauptverfasser:	Kruglova, M V, Maximov, G A, Filatov, D O, Nikolitchev, D E, Shengurov, V G, Morozov, S V
Format:	Tagungsbericht
Sprache:	eng
Online-Zugang:	Volltext
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