Composition, photoelectric properties, and electroluminescence of the SiGe/Si heterostructures with self-assembled nanoclusters grown by molecular beam epitaxy with vapor Ge source

Composition, photoelectric properties, and electroluminescence of the SiGe/Si heterostructures with self-assembled nanoclusters grown by molecular beam epitaxy with vapor Ge source

The photoelectric properties and electroluminescence of the p-i-n diodes based on SiGe/Si heterostructures with self-assembled SiGe nanoclusters grown by Molecular Beam Epitaxy with vapor Ge source have been studied. The composition of the SiGe nanoclusters was studied by a new method of Scanning Au...

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Hauptverfasser: Kruglova, M V, Maximov, G A, Filatov, D O, Nikolitchev, D E, Shengurov, V G, Morozov, S V
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:The photoelectric properties and electroluminescence of the p-i-n diodes based on SiGe/Si heterostructures with self-assembled SiGe nanoclusters grown by Molecular Beam Epitaxy with vapor Ge source have been studied. The composition of the SiGe nanoclusters was studied by a new method of Scanning Auger Microscopy. A method for analysis of the photosensitivity spectra of the SiGe/Si heterostructures has been developed. The electroluminescence in the p-i-n diodes with SiGe clusters at 77K has been observed.
ISSN:0094-243X
DOI:10.1063/1.1994259