Characteristics of structural defects in the 240kg silicon ingot grown by directional solidification process

Multi-crystalline silicon for solar cell over single crystalline silicon is its capability of using cheaper raw material. Since cheaper material contains harmful metal impurities, gettering technology has to be applied to silicon wafers to reduce the metal content in the crystal. Low dislocation den...

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Veröffentlicht in:Solar energy materials and solar cells 2006-07, Vol.90 (11), p.1666-1672
Hauptverfasser: il Kim, Dae, Kwan Kim, Young
Format: Artikel
Sprache:eng
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Zusammenfassung:Multi-crystalline silicon for solar cell over single crystalline silicon is its capability of using cheaper raw material. Since cheaper material contains harmful metal impurities, gettering technology has to be applied to silicon wafers to reduce the metal content in the crystal. Low dislocation density in the 240kg multi-crystalline silicon crystal provides the strong possibility of gettering for the low cost silicon solar cell. Saw damage induced during the slicing process of multi-crystalline silicon ingot was confirmed to generate dislocation loops which can be employed for extrinsic gettering.
ISSN:0927-0248
DOI:10.1016/j.solmat.2005.09.011