On Current Limitations in Porous SiC Applications

Thermal stability of porous SiC (PSC) with nano-, micro- and double-layer porous structure is assessed through annealing the material at T=900–1700 0C in vacuum and Ar. Changes in composition of PSC under thermal treatment are correlated with porous structure modification. Limitations in PSC technol...

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Veröffentlicht in:	Materials Science Forum 2005-05, Vol.483-485, p.269-272
Hauptverfasser:	Mynbaeva, Marina G., Kotousova, I., Volkova, A.N., Lavrent'ev, A., Lebedev, Alexander A., Mynbaev, K.
Format:	Artikel
Sprache:	eng
Online-Zugang:	Volltext
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Zusammenfassung:	Thermal stability of porous SiC (PSC) with nano-, micro- and double-layer porous structure is assessed through annealing the material at T=900–1700 0C in vacuum and Ar. Changes in composition of PSC under thermal treatment are correlated with porous structure modification. Limitations in PSC technology and applications due to compositional and structure evolution at high temperatures are discussed.
ISSN:	0255-5476 1662-9752 1662-9752
DOI:	10.4028/www.scientific.net/MSF.483-485.269