Large Area, Avalanche-Stable 4H-SiC PiN Diodes with VBR > 4.5 kV

Large Area, Avalanche-Stable 4H-SiC PiN Diodes with VBR > 4.5 kV

Large area 4H-SiC PIN diodes have been fabricated which exhibit a stable avalanche ranging between 4.5 and 5.5 kV. The avalanche occurs at an electrical field strength of 2.1 MV/cm at the pn junction. The temperature coefficient of the avalanche is positive (0.3 V/K). The avalanche is tested in DC m...

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Veröffentlicht in:Materials Science Forum 2005-05, Vol.483-485, p.977-980
Hauptverfasser: Friedrichs, Peter, Elpelt, Rudolf, Peters, Dethard, Schörner, Reinhold, Stephani, Dietrich, Dohnke, Karl Otto
Format: Artikel
Sprache:eng
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Zusammenfassung:Large area 4H-SiC PIN diodes have been fabricated which exhibit a stable avalanche ranging between 4.5 and 5.5 kV. The avalanche occurs at an electrical field strength of 2.1 MV/cm at the pn junction. The temperature coefficient of the avalanche is positive (0.3 V/K). The avalanche is tested in DC mode. The device concept as well as the fabrication process is described in detail. Static and dynamic characteristics are shown.
ISSN:0255-5476
1662-9752
1662-9752
DOI:10.4028/www.scientific.net/MSF.483-485.977