Electrical conductivity of Bi12SiO20 single crystals doped with Os, Re, Ru, and Rh

Electrical conductivity of Bi12SiO20 single crystals doped with Os, Re, Ru, and Rh

Bi12SiO20 crystals doped with Os, Re, Ru, and Rh were grown by the Czochralski technique, and their conductivity (real and imaginary parts) was measured as a function of temperature and frequency. The results are interpreted as evidence that the charge transport in the crystals is due to hopping alo...

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Veröffentlicht in:Inorganic materials 2005-02, Vol.41 (2), p.152-155
Hauptverfasser: Milenov, T. I., Veleva, M. N., Petrova, D. P., Gospodinov, M. M., Skorikov, V. M., Egorysheva, A. V., Kargin, Yu. F., Vasil?ev, A. Ya
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Sprache:eng
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Zusammenfassung:Bi12SiO20 crystals doped with Os, Re, Ru, and Rh were grown by the Czochralski technique, and their conductivity (real and imaginary parts) was measured as a function of temperature and frequency. The results are interpreted as evidence that the charge transport in the crystals is due to hopping along chains of localized states.
ISSN:0020-1685
1608-3172
DOI:10.1007/s10789-005-0035-y