V-band high-efficiency high-power AlInAs/GaInAs/InP HEMT's

V-band high-efficiency high-power AlInAs/GaInAs/InP HEMT's

The authors report on the state-of-the-art power performance of InP-based HEMTs (high electron mobility transistors) at 59 GHz. Using a 448- mu m-wide HEMT with a gate length of 0.15 mu m, an output power of 155 mW with a 4.9-dB gain and a power-added efficiency of 30.1% were obtained. By power-comb...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 1993-12, Vol.41 (12), p.2206-2210
Hauptverfasser: Matloubian, M., Jelloian, L.M., Brown, A.S., Nguyen, L.D., Larson, L.E., Delaney, M.J., Thompson, M.A., Rhodes, R.A., Pence, J.E.
Format: Artikel
Sprache:eng
Schlagworte:
Atomic layer deposition
Current density
Electrons
Gain
Gallium arsenide
HEMTs
Indium gallium arsenide
Indium phosphide
Power generation
Schottky barriers
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Zusammenfassung:The authors report on the state-of-the-art power performance of InP-based HEMTs (high electron mobility transistors) at 59 GHz. Using a 448- mu m-wide HEMT with a gate length of 0.15 mu m, an output power of 155 mW with a 4.9-dB gain and a power-added efficiency of 30.1% were obtained. By power-combining two of these HEMTs, an output power of 288 mW with 3.6-dB gain and a power-added efficiency of 20.4% were achieved. This is the highest output power reported with such a high efficiency for InP-based HEMTs, and is comparable to the best results reported for AlGaAs/InGaAs on GaAs pseudomorphic HEMTs at this frequency.< >
ISSN:0018-9480
1557-9670
DOI:10.1109/22.260707