The theory of the interaction of drifting carriers in a semiconductor with external traveling-wave circuits
The interaction between slow electromagnetic waves and drifting carriers in a semiconductor is analyzed including mechanisms important and peculiar to the semiconductor device. The growth rate coefficients, excitation amplitudes, and phase are found using a modification of Pierce's one-dimensio...
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| Veröffentlicht in: | IEEE transactions on electron devices 1970-03, Vol.17 (3), p.219-223 |
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| Hauptverfasser: | , |
| Format: | Artikel |
| Sprache: | eng |
| Online-Zugang: | Volltext bestellen |
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| Zusammenfassung: | The interaction between slow electromagnetic waves and drifting carriers in a semiconductor is analyzed including mechanisms important and peculiar to the semiconductor device. The growth rate coefficients, excitation amplitudes, and phase are found using a modification of Pierce's one-dimensional model of the traveling-wave tube. A technique for calculating a growing mode criterion is presented. |
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| ISSN: | 0018-9383 1557-9646 |
| DOI: | 10.1109/T-ED.1970.16957 |