Surface potential at threshold in thin-film SOI MOSFET's

Surface potential at threshold in thin-film SOI MOSFET's

The usual condition for threshold in bulk MOSFETs, of equal rates of change with gate voltage of the inversion and bulk charges, is suitably modified to describe threshold in fully depleted SOI MOSFETs. Using this modified condition the value of the surface potential at threshold in fully depleted t...

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Veröffentlicht in:IEEE transactions on electron devices 1993-06, Vol.40 (6), p.1129-1133
Hauptverfasser: Mazhari, B., Ioannou, D.E.
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Capacitance
Couplings
Doping
Electronics
Exact sciences and technology
MOSFET circuits
Numerical simulation
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor films
Silicon
Subthreshold current
Threshold voltage
Transistors
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Zusammenfassung:The usual condition for threshold in bulk MOSFETs, of equal rates of change with gate voltage of the inversion and bulk charges, is suitably modified to describe threshold in fully depleted SOI MOSFETs. Using this modified condition the value of the surface potential at threshold in fully depleted transistors is obtained analytically in terms of device dimensions, film doping level, and applied voltages. The results are in excellent agreement with one-dimensional numerical simulations, and it is shown that the surface potential at threshold may differ significantly from 2 phi /sub F/, the value conventionally assumed.< >
ISSN:0018-9383
1557-9646
DOI:10.1109/16.214739