The mechanism and evaluation of hot-carrier-induced performance degradation in 0.18-mum CMOS image sensor

The mechanism and evaluation of hot-carrier-induced performance degradation in 0.18-mum CMOS image sensor

An effective method to evaluate the hot-carrier-induced pixel performance degradation of 0.18-mum CMOS active pixel sensor has been reported. The hot carriers generated at the source follower transistor and absorbed by the nearby photodiode will cause the pixel performance degradation such as increa...

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Veröffentlicht in:IEEE electron device letters 2004-06, Vol.25 (6), p.427-429
Hauptverfasser: Hsu, T H, Fang, Y K, Yaung, D N, Wuu, S G, Chien, H C, Wang, C S, Lin, J S, Tseng, C H, Chen, S F, Lin, C S, Lin, C Y
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Sprache:eng
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Zusammenfassung:An effective method to evaluate the hot-carrier-induced pixel performance degradation of 0.18-mum CMOS active pixel sensor has been reported. The hot carriers generated at the source follower transistor and absorbed by the nearby photodiode will cause the pixel performance degradation such as increase of dark signal and decrease of operation range. Based on the detailed measurements through overall operation conditions, a simple method has been proposed to evaluate the degradation induced by the hot carriers and, thus, provides a design guide to predict pixel performance.
ISSN:0741-3106
DOI:10.1109/LED.2004.829000