The effect of plastic strain relaxation on the morphology of Ge quantum dot superlattices

A series of Ge quantum dot superlattices were prepared to study the relationship of the dot morphology evolution with the number of layers. Strain relaxation was observed in thicker films and the dots transited from broad size distribution to size equalization and eventually to broad size distributi...

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Veröffentlicht in:	Journal of crystal growth 2005-02, Vol.274 (3-4), p.367-371
Hauptverfasser:	Liu, J.L., Wang, K.L., Xie, Q.H., Thomas, S.G.
Format:	Artikel
Sprache:	eng
Schlagworte:	61.82.Rx 81.05.Cy 81.15.Hi A1. Nanostructures A3. Molecular beam epitaxy B2. Semiconducting germanium Condensed matter: structure, mechanical and thermal properties Cross-disciplinary physics: materials science rheology Elasticity, elastic constants Exact sciences and technology Materials science Mechanical and acoustical properties of condensed matter Mechanical properties of solids Nanoscale materials and structures: fabrication and characterization Physics Quantum dots
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Beschreibung
Zusammenfassung:	A series of Ge quantum dot superlattices were prepared to study the relationship of the dot morphology evolution with the number of layers. Strain relaxation was observed in thicker films and the dots transited from broad size distribution to size equalization and eventually to broad size distribution again as a result of the generation of threading dislocations in the quantum dot superlattice films.
ISSN:	0022-0248 1873-5002
DOI:	10.1016/j.jcrysgro.2004.10.057