STM study of the early stages of the Cr/Si(1 1 1) interface formation

STM study of the early stages of the Cr/Si(1 1 1) interface formation

Using scanning tunneling microscopy (STM), the early stages of the Cr/Si(1 1 1) interface formation was studied. Two growth regimes, solid phase epitaxy and reactive deposition epitaxy, were employed. Deposited Cr amount was varied from 0.1 to 2.0 monolayers, growth temperature was ranging from room...

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Veröffentlicht in:Surface science 2005-12, Vol.596 (1), p.53-60
Hauptverfasser: Utas, O.A., Utas, T.V., Kotlyar, V.G., Zotov, A.V., Saranin, A.A., Lifshits, V.G.
Format: Artikel
Sprache:eng
Schlagworte:
Atom–solid interactions
Chromium
Scanning tunneling microscopy (STM)
Silicon
Surface structure, morphology, roughness, and topography
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Zusammenfassung:Using scanning tunneling microscopy (STM), the early stages of the Cr/Si(1 1 1) interface formation was studied. Two growth regimes, solid phase epitaxy and reactive deposition epitaxy, were employed. Deposited Cr amount was varied from 0.1 to 2.0 monolayers, growth temperature was ranging from room temperature to 750 °C. The effect of the growth conditions on the structure and morphology of the formed interface was established.
ISSN:0039-6028
1879-2758
DOI:10.1016/j.susc.2005.09.004