Technology of superconducting thin films on Si, SiO(2), and Si(3)N(4) for vacuum microelectronics

A study of YBaCuO films on Si, SiO(2), and Si(3)N(4) substrates demonstrates that rapid thermal processing can suppress the film-substrate reaction during the postgrowth oxygen annealing. By increasing the copper content of YBaCuO films that are sputter-deposited on SiO(2)/Si to correspond to the 1:2:3 metal composition, the authors have achieved an onset of superconductivity above 95 K and a Tc(0) above 70 K through a rapid oxygen anneal for 6 s at 940 degrees C without a nitrogen preanneal. These results as well as results of others suggest that high Tc oxide superconductors could be used as electron sources or as cold emitters, gates, and collectors.