Sensitivity of a 40 GHz HEMT low-noise amplifier to material and processing variations

The design of a monolithic, single-stage low-noise amplifier at 40 GHz for application to satellite communication is presented. The amplifier includes a single 0.25- mu m-gate-length HEMT active device with on-chip matching and biasing circuits. A gain of 8 dB and a noise figure of 4 dB were measure...

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Veröffentlicht in:	IEEE transactions on microwave theory and techniques 1989-12, Vol.37 (12), p.2169-2170
Hauptverfasser:	Yuen, C., Nishimoto, C., Bandy, S., Zdasiuk, G.
Format:	Artikel
Sprache:	eng
Schlagworte:	Capacitance Circuits Feedback Gain measurement HEMTs Low-noise amplifiers Noise figure Noise measurement Satellite communication Semiconductor device measurement
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