Sensitivity of a 40 GHz HEMT low-noise amplifier to material and processing variations

Sensitivity of a 40 GHz HEMT low-noise amplifier to material and processing variations

The design of a monolithic, single-stage low-noise amplifier at 40 GHz for application to satellite communication is presented. The amplifier includes a single 0.25- mu m-gate-length HEMT active device with on-chip matching and biasing circuits. A gain of 8 dB and a noise figure of 4 dB were measure...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 1989-12, Vol.37 (12), p.2169-2170
Hauptverfasser: Yuen, C., Nishimoto, C., Bandy, S., Zdasiuk, G.
Format: Artikel
Sprache:eng
Schlagworte:
Capacitance
Circuits
Feedback
Gain measurement
HEMTs
Low-noise amplifiers
Noise figure
Noise measurement
Satellite communication
Semiconductor device measurement
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Zusammenfassung:The design of a monolithic, single-stage low-noise amplifier at 40 GHz for application to satellite communication is presented. The amplifier includes a single 0.25- mu m-gate-length HEMT active device with on-chip matching and biasing circuits. A gain of 8 dB and a noise figure of 4 dB were measured from 36 to 42 GHz for an amplifier with a mushroom gate profile. Using a triangular-gate-profile device with a lower gate-to-drain feedback capacitance, the amplifier achieves a 10 dB peak gain at 43 GHz. The chip size is 1.1*1.1 mm/sup 2/.< >
ISSN:0018-9480
1557-9670
DOI:10.1109/22.44140