Isolated emitter AlGaAs/GaAs HBT integrated with emitter-down HI(2)L technology

Isolated emitter AlGaAs/GaAs HBT integrated with emitter-down HI(2)L technology

A process that integrates isolated-emitter heterojunction bipolar transistors (HBTs) with common-emitter HBTs in the emitter-down epi structure on n( ) substrates is discussed. Overgrowth of the epi onto a p(-) implanted region results in back-to-back diodes for ~12-V vertical isolation. Isolated tr...

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Veröffentlicht in:IEEE electron device letters 1989-11, Vol.10 (11), p.508-510
Hauptverfasser: Plumton, D L, Chang, C T M, Woods, B O
Format: Artikel
Sprache:eng
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Zusammenfassung:A process that integrates isolated-emitter heterojunction bipolar transistors (HBTs) with common-emitter HBTs in the emitter-down epi structure on n( ) substrates is discussed. Overgrowth of the epi onto a p(-) implanted region results in back-to-back diodes for ~12-V vertical isolation. Isolated transistors are used in emitter-follower output buffers for heterojunction injection logic (HI (2)L) ring oscillators, demonstrating the integration of the two transistor types
ISSN:0741-3106
DOI:10.1109/55.43119