Low voltage–driven high-performance thermal switching in antiferroelectric PbZrO3 thin films

Editor’s summaryControlling thermal transport by switching devices is challenging because rapidly changing a material’s thermal properties is difficult. Liu et al. demonstrate that a thermal switch can be made from lead zirconium oxide controlled with a small voltage. The material can be changed fro...

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Veröffentlicht in:Science (American Association for the Advancement of Science) 2023-12, Vol.382 (6676), p.1265-1269
Hauptverfasser: Liu, Chenhan, Si, Yangyang, Zhang, Hua, Wu, Chao, Deng, Shiqing, Dong, Yongqi, Li, Yijie, Meng Zhuo, Fan, Ningbo, Xu, Bin, Lu, Ping, Zhang, Lifa, Lin, Xi, Liu, Xingjun, Yang, Juekuan, Luo, Zhenlin, Das, Sujit, Bellaiche, Laurent, Chen, Yunfei, Chen, Zuhuang
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Sprache:eng
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Zusammenfassung:Editor’s summaryControlling thermal transport by switching devices is challenging because rapidly changing a material’s thermal properties is difficult. Liu et al. demonstrate that a thermal switch can be made from lead zirconium oxide controlled with a small voltage. The material can be changed from ferroelectric to antiferroelectric with an electric field that also dramatically changes the thermal properties. This switch changes the thermal transport by a factor of two in one direction, creating a useful thermal switch. —Brent Grocholski
ISSN:0036-8075
1095-9203
DOI:10.1126/science.adj9669