Low voltage–driven high-performance thermal switching in antiferroelectric PbZrO3 thin films
Editor’s summaryControlling thermal transport by switching devices is challenging because rapidly changing a material’s thermal properties is difficult. Liu et al. demonstrate that a thermal switch can be made from lead zirconium oxide controlled with a small voltage. The material can be changed fro...
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Veröffentlicht in: | Science (American Association for the Advancement of Science) 2023-12, Vol.382 (6676), p.1265-1269 |
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Hauptverfasser: | , , , , , , , , , , , , , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Online-Zugang: | Volltext |
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Zusammenfassung: | Editor’s summaryControlling thermal transport by switching devices is challenging because rapidly changing a material’s thermal properties is difficult. Liu et al. demonstrate that a thermal switch can be made from lead zirconium oxide controlled with a small voltage. The material can be changed from ferroelectric to antiferroelectric with an electric field that also dramatically changes the thermal properties. This switch changes the thermal transport by a factor of two in one direction, creating a useful thermal switch. —Brent Grocholski |
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ISSN: | 0036-8075 1095-9203 |
DOI: | 10.1126/science.adj9669 |