Subthreshold analysis of an MOS analog switch

Charge injection error in the presence of subthreshold effects has been analyzed. It is confirmed that the subthreshold effect is significant at low voltage falling rates. A simplified model is derived using an appropriate approximation. Predictions are compared to the results of a SPICE simulation,...

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Veröffentlicht in:IEEE transactions on electron devices 1997-01, Vol.44 (1), p.89-96
Hauptverfasser: Aghtar, S., Haslett, J.W., Trofimenkoff, F.N.
Format: Artikel
Sprache:eng
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