Subthreshold analysis of an MOS analog switch

Subthreshold analysis of an MOS analog switch

Charge injection error in the presence of subthreshold effects has been analyzed. It is confirmed that the subthreshold effect is significant at low voltage falling rates. A simplified model is derived using an appropriate approximation. Predictions are compared to the results of a SPICE simulation,...

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Veröffentlicht in:IEEE transactions on electron devices 1997-01, Vol.44 (1), p.89-96
Hauptverfasser: Aghtar, S., Haslett, J.W., Trofimenkoff, F.N.
Format: Artikel
Sprache:eng
Schlagworte:
Analytical models
Capacitance
Computational modeling
Instruments
Low voltage
Physics computing
Predictive models
SPICE
Switches
Switching circuits
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Zusammenfassung:Charge injection error in the presence of subthreshold effects has been analyzed. It is confirmed that the subthreshold effect is significant at low voltage falling rates. A simplified model is derived using an appropriate approximation. Predictions are compared to the results of a SPICE simulation, a nonquasi-static (NQS) model simulation and experimental results. Excellent agreement between the modified and NQS model and recently published experimental results was obtained. This analytical model is computationally efficient compared to the SPICE and NQS models and provides physical insight into the switching errors.
ISSN:0018-9383
1557-9646
DOI:10.1109/16.554798