Subthreshold analysis of an MOS analog switch
Charge injection error in the presence of subthreshold effects has been analyzed. It is confirmed that the subthreshold effect is significant at low voltage falling rates. A simplified model is derived using an appropriate approximation. Predictions are compared to the results of a SPICE simulation,...
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Veröffentlicht in: | IEEE transactions on electron devices 1997-01, Vol.44 (1), p.89-96 |
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creator | Aghtar, S. Haslett, J.W. Trofimenkoff, F.N. |
description | Charge injection error in the presence of subthreshold effects has been analyzed. It is confirmed that the subthreshold effect is significant at low voltage falling rates. A simplified model is derived using an appropriate approximation. Predictions are compared to the results of a SPICE simulation, a nonquasi-static (NQS) model simulation and experimental results. Excellent agreement between the modified and NQS model and recently published experimental results was obtained. This analytical model is computationally efficient compared to the SPICE and NQS models and provides physical insight into the switching errors. |
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It is confirmed that the subthreshold effect is significant at low voltage falling rates. A simplified model is derived using an appropriate approximation. Predictions are compared to the results of a SPICE simulation, a nonquasi-static (NQS) model simulation and experimental results. Excellent agreement between the modified and NQS model and recently published experimental results was obtained. This analytical model is computationally efficient compared to the SPICE and NQS models and provides physical insight into the switching errors.</description><subject>Analytical models</subject><subject>Capacitance</subject><subject>Computational modeling</subject><subject>Instruments</subject><subject>Low voltage</subject><subject>Physics computing</subject><subject>Predictive models</subject><subject>SPICE</subject><subject>Switches</subject><subject>Switching circuits</subject><issn>0018-9383</issn><issn>1557-9646</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1997</creationdate><recordtype>article</recordtype><recordid>eNqF0D1Pw0AMBuATAolSGFiZMiExpNj3lbsRVXxJRR0K8-lycUhQ2pRcKtR_TyAVK5Nf2488mLFLhBki2FvUM6VkZs0Rm6BSWWq11MdsAoAmtcKIU3YW48fQain5hKWrXd5XHcWqbYrEb3yzj3VM2nLIycty9Ttq35P4VfehOmcnpW8iXRzqlL093L_On9LF8vF5frdIgwDTp6REbjNdCFP6YD1ixlWJMvgiByFzGTgEQQSl5XmmkVMBmVXC5oDKDEFM2fV4d9u1nzuKvVvXMVDT-A21u-i4Ba4k4P_QKAPKqAHejDB0bYwdlW7b1Wvf7R2C-_mcQ-3Gzw32arQ1Ef25w_Ib1T9mcQ</recordid><startdate>199701</startdate><enddate>199701</enddate><creator>Aghtar, S.</creator><creator>Haslett, J.W.</creator><creator>Trofimenkoff, F.N.</creator><general>IEEE</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7U5</scope></search><sort><creationdate>199701</creationdate><title>Subthreshold analysis of an MOS analog switch</title><author>Aghtar, S. ; Haslett, J.W. ; Trofimenkoff, F.N.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c308t-e53b976d38fac9a11725f14cadb034b4c20c3ee0f92b7612ed079539b01589533</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1997</creationdate><topic>Analytical models</topic><topic>Capacitance</topic><topic>Computational modeling</topic><topic>Instruments</topic><topic>Low voltage</topic><topic>Physics computing</topic><topic>Predictive models</topic><topic>SPICE</topic><topic>Switches</topic><topic>Switching circuits</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Aghtar, S.</creatorcontrib><creatorcontrib>Haslett, J.W.</creatorcontrib><creatorcontrib>Trofimenkoff, F.N.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE transactions on electron devices</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Aghtar, S.</au><au>Haslett, J.W.</au><au>Trofimenkoff, F.N.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Subthreshold analysis of an MOS analog switch</atitle><jtitle>IEEE transactions on electron devices</jtitle><stitle>TED</stitle><date>1997-01</date><risdate>1997</risdate><volume>44</volume><issue>1</issue><spage>89</spage><epage>96</epage><pages>89-96</pages><issn>0018-9383</issn><eissn>1557-9646</eissn><coden>IETDAI</coden><abstract>Charge injection error in the presence of subthreshold effects has been analyzed. It is confirmed that the subthreshold effect is significant at low voltage falling rates. A simplified model is derived using an appropriate approximation. Predictions are compared to the results of a SPICE simulation, a nonquasi-static (NQS) model simulation and experimental results. Excellent agreement between the modified and NQS model and recently published experimental results was obtained. This analytical model is computationally efficient compared to the SPICE and NQS models and provides physical insight into the switching errors.</abstract><pub>IEEE</pub><doi>10.1109/16.554798</doi><tpages>8</tpages></addata></record> |
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ispartof | IEEE transactions on electron devices, 1997-01, Vol.44 (1), p.89-96 |
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subjects | Analytical models Capacitance Computational modeling Instruments Low voltage Physics computing Predictive models SPICE Switches Switching circuits |
title | Subthreshold analysis of an MOS analog switch |
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