Quantum effects and RF-SQUID sensitivity

Fine structure of V RF vs I RF dependence of the rf SQUID in the hysteretic mode is investigated experimentally at temperatures from 0.5 to 4.2 K. A suggestion is made that for high resistance point contacts of small capacitance the SQUID sensitivity may be limited by quantum processes for temperatu...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Veröffentlicht in:	IEEE Trans. Magn.; (United States) 1983-05, Vol.19 (3), p.576-579
Hauptverfasser:	Dmitrenko, I., Khlus, V., Tsoi, G., Shnyrkov, V.
Format:	Artikel
Sprache:	eng
Schlagworte:	420201 - Engineering- Cryogenic Equipment & Devices CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS Damping ELECTRONIC EQUIPMENT Fluctuations FLUXMETERS HYSTERESIS Magnetic flux MEASURING INSTRUMENTS MECHANICS Metastasis MICROWAVE EQUIPMENT Oscillators Probability distribution Quantization QUANTUM MECHANICS RF SYSTEMS SENSITIVITY SQUID DEVICES SQUIDs SUPERCONDUCTING DEVICES TEMPERATURE DEPENDENCE TUNNEL EFFECT Tunneling
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	Fine structure of V RF vs I RF dependence of the rf SQUID in the hysteretic mode is investigated experimentally at temperatures from 0.5 to 4.2 K. A suggestion is made that for high resistance point contacts of small capacitance the SQUID sensitivity may be limited by quantum processes for temperatures high enough ( T\simeq4 K). To explain the experimental results macroscopic quantum tunneling and zero-point fluctuations are considered as relevant mechanisms.
ISSN:	0018-9464 1941-0069
DOI:	10.1109/TMAG.1983.1062492