A Power Silicon Microwave MOS Transistor

Vertical MOS silicon power transistors for microwave power applications have been fabricated using an angle evaporation technique to position the gate electrode on the side of a mesa. These devices have produced 3-W output power at 1.5 GHz as a Class B amplifier and exhibit excellent linearity and n...

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Veröffentlicht in:IEEE transactions on microwave theory and techniques 1976-06, Vol.24 (6), p.305-311
Hauptverfasser: Oakes, J.G., Wickstrom, R.A., Tremere, D.A., Heng, T.M.S.
Format: Artikel
Sprache:eng
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Zusammenfassung:Vertical MOS silicon power transistors for microwave power applications have been fabricated using an angle evaporation technique to position the gate electrode on the side of a mesa. These devices have produced 3-W output power at 1.5 GHz as a Class B amplifier and exhibit excellent linearity and noise properties. Device modeling has shown that parasitic capacitances are the chief factor limiting the frequency response, and the prospects for useful devices at 4 GHz are good.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.1976.1128847