Power results at 4 GHz of AlGaN/GaN HEMTs on high resistive silicon 111 substrate
The high potential at microwave frequencies of AlGaN/GaN high electron mobility transistors (HEMTs) on high resistive silicon [111] substrate for power applications has been demonstrated in this letter. For the first time, an output power density close to 1.8 W/mm and an associated power added effic...
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| Veröffentlicht in: | IEEE microwave and wireless components letters 2003-03, Vol.13 (3), p.99-101 |
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| container_end_page | 101 |
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| container_issue | 3 |
| container_start_page | 99 |
| container_title | IEEE microwave and wireless components letters |
| container_volume | 13 |
| creator | Vellas, N Gaquiere, C Minko, A Hoel, V De Jaeger, J C Cordier, Y Semond, F |
| description | The high potential at microwave frequencies of AlGaN/GaN high electron mobility transistors (HEMTs) on high resistive silicon [111] substrate for power applications has been demonstrated in this letter. For the first time, an output power density close to 1.8 W/mm and an associated power added efficiency of 32% have been measured on a 2 x 50 x 0.5 mum(2) HEMT with a linear power gain of 16 dB. These results constitute the state of the art. |
| doi_str_mv | 10.1109/LMWC.2003.810117 |
| format | Article |
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For the first time, an output power density close to 1.8 W/mm and an associated power added efficiency of 32% have been measured on a 2 x 50 x 0.5 mum(2) HEMT with a linear power gain of 16 dB. 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For the first time, an output power density close to 1.8 W/mm and an associated power added efficiency of 32% have been measured on a 2 x 50 x 0.5 mum(2) HEMT with a linear power gain of 16 dB. These results constitute the state of the art.</abstract><doi>10.1109/LMWC.2003.810117</doi><tpages>3</tpages></addata></record> |
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| ispartof | IEEE microwave and wireless components letters, 2003-03, Vol.13 (3), p.99-101 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) |
| title | Power results at 4 GHz of AlGaN/GaN HEMTs on high resistive silicon 111 substrate |
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