Power results at 4 GHz of AlGaN/GaN HEMTs on high resistive silicon 111 substrate

The high potential at microwave frequencies of AlGaN/GaN high electron mobility transistors (HEMTs) on high resistive silicon [111] substrate for power applications has been demonstrated in this letter. For the first time, an output power density close to 1.8 W/mm and an associated power added efficiency of 32% have been measured on a 2 x 50 x 0.5 mum(2) HEMT with a linear power gain of 16 dB. These results constitute the state of the art.