A parametric short-channel MOS transistor model for subthreshold and strong inversion current
The authors present a parametric model which covers the subthreshold and strong inversion regions with a continuous transition between these regions. The effects included in the model are mobility reduction, carrier velocity saturation, body effect, source-drain resistance, drain-induced barrier low...
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| Veröffentlicht in: | IEEE journal of solid-state circuits 1984-02, Vol.19 (1), p.100-112 |
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| Sprache: | eng |
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| container_end_page | 112 |
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| container_issue | 1 |
| container_start_page | 100 |
| container_title | IEEE journal of solid-state circuits |
| container_volume | 19 |
| creator | Grotjohn, T. Hoefflinger, B. |
| description | The authors present a parametric model which covers the subthreshold and strong inversion regions with a continuous transition between these regions. The effects included in the model are mobility reduction, carrier velocity saturation, body effect, source-drain resistance, drain-induced barrier lowering, and channel-length modulation. The model simulates accurately the current characteristics as well as the transconductance and output conductance characteristics which are important for analog circuit simulation. |
| doi_str_mv | 10.1109/JSSC.1984.1052093 |
| format | Article |
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The effects included in the model are mobility reduction, carrier velocity saturation, body effect, source-drain resistance, drain-induced barrier lowering, and channel-length modulation. The model simulates accurately the current characteristics as well as the transconductance and output conductance characteristics which are important for analog circuit simulation.</description><identifier>ISSN: 0018-9200</identifier><identifier>EISSN: 1558-173X</identifier><identifier>DOI: 10.1109/JSSC.1984.1052093</identifier><identifier>CODEN: IJSCBC</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Capacitance ; Circuit simulation ; Electronics ; Exact sciences and technology ; MOSFETs ; Permittivity ; Semiconductor electronics. Microelectronics. Optoelectronics. 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The effects included in the model are mobility reduction, carrier velocity saturation, body effect, source-drain resistance, drain-induced barrier lowering, and channel-length modulation. The model simulates accurately the current characteristics as well as the transconductance and output conductance characteristics which are important for analog circuit simulation.</description><subject>Applied sciences</subject><subject>Capacitance</subject><subject>Circuit simulation</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>MOSFETs</subject><subject>Permittivity</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Silicon</subject><subject>Subthreshold current</subject><subject>Surface resistance</subject><subject>Threshold voltage</subject><subject>Transconductance</subject><subject>Transistors</subject><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>1984</creationdate><recordtype>article</recordtype><recordid>eNqFkM9LwzAUx4MoOKd_gHjJQbx15iXp1h7H8CeTHabgRUqavrpIl84kFfzvTekQb55eXvi8L18-hJwDmwCw_PpxvV5MIM_kBFjKWS4OyAjSNEtgJl4PyYgxyJKcM3ZMTrz_iKuUGYzI25zulFNbDM5o6jetC4neKGuxoU-rNQ1OWW98aB3dtlX8rOPLd2XYOIx0U1FlK-qDa-07NfYLnTetpbpzDm04JUe1ajye7eeYvNzePC_uk-Xq7mExXyZapDIkcqaz2HkmxBRrVWkW60HKuU4FMMk1l6WSCkGhAi5SlLIEzsqs4qUUlcrFmFwNuTvXfnboQ7E1XmPTKItt5wueMxCSw_9glnKYij4RBlC71nuHdbFzZqvcdwGs6I0XvfGiN17sjceby3248lo1dVSnjf89zKc8Qn2HiwEziPgndgj5AVRQies</recordid><startdate>19840201</startdate><enddate>19840201</enddate><creator>Grotjohn, T.</creator><creator>Hoefflinger, B.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7U5</scope></search><sort><creationdate>19840201</creationdate><title>A parametric short-channel MOS transistor model for subthreshold and strong inversion current</title><author>Grotjohn, T. ; Hoefflinger, B.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c354t-47c82097336efadc00011522c531042c24ba4ae1aea1235e44b120b8d2b43da93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>1984</creationdate><topic>Applied sciences</topic><topic>Capacitance</topic><topic>Circuit simulation</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>MOSFETs</topic><topic>Permittivity</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Silicon</topic><topic>Subthreshold current</topic><topic>Surface resistance</topic><topic>Threshold voltage</topic><topic>Transconductance</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Grotjohn, T.</creatorcontrib><creatorcontrib>Hoefflinger, B.</creatorcontrib><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE journal of solid-state circuits</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Grotjohn, T.</au><au>Hoefflinger, B.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A parametric short-channel MOS transistor model for subthreshold and strong inversion current</atitle><jtitle>IEEE journal of solid-state circuits</jtitle><stitle>JSSC</stitle><date>1984-02-01</date><risdate>1984</risdate><volume>19</volume><issue>1</issue><spage>100</spage><epage>112</epage><pages>100-112</pages><issn>0018-9200</issn><eissn>1558-173X</eissn><coden>IJSCBC</coden><abstract>The authors present a parametric model which covers the subthreshold and strong inversion regions with a continuous transition between these regions. The effects included in the model are mobility reduction, carrier velocity saturation, body effect, source-drain resistance, drain-induced barrier lowering, and channel-length modulation. The model simulates accurately the current characteristics as well as the transconductance and output conductance characteristics which are important for analog circuit simulation.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/JSSC.1984.1052093</doi><tpages>13</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 0018-9200 |
| ispartof | IEEE journal of solid-state circuits, 1984-02, Vol.19 (1), p.100-112 |
| issn | 0018-9200 1558-173X |
| language | eng |
| recordid | cdi_proquest_miscellaneous_29013421 |
| source | IEEE Electronic Library (IEL) |
| subjects | Applied sciences Capacitance Circuit simulation Electronics Exact sciences and technology MOSFETs Permittivity Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Subthreshold current Surface resistance Threshold voltage Transconductance Transistors |
| title | A parametric short-channel MOS transistor model for subthreshold and strong inversion current |
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