A parametric short-channel MOS transistor model for subthreshold and strong inversion current

The authors present a parametric model which covers the subthreshold and strong inversion regions with a continuous transition between these regions. The effects included in the model are mobility reduction, carrier velocity saturation, body effect, source-drain resistance, drain-induced barrier low...

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Veröffentlicht in:	IEEE journal of solid-state circuits 1984-02, Vol.19 (1), p.100-112
Hauptverfasser:	Grotjohn, T., Hoefflinger, B.
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied sciences Capacitance Circuit simulation Electronics Exact sciences and technology MOSFETs Permittivity Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Silicon Subthreshold current Surface resistance Threshold voltage Transconductance Transistors
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Beschreibung
Zusammenfassung:	The authors present a parametric model which covers the subthreshold and strong inversion regions with a continuous transition between these regions. The effects included in the model are mobility reduction, carrier velocity saturation, body effect, source-drain resistance, drain-induced barrier lowering, and channel-length modulation. The model simulates accurately the current characteristics as well as the transconductance and output conductance characteristics which are important for analog circuit simulation.
ISSN:	0018-9200 1558-173X
DOI:	10.1109/JSSC.1984.1052093