The partial pressure effect on the growth of YSZ film and YSZ buffered multilayers on silicon

YSZ thin film was deposited on native Si wafer without prior removal of surface amorphous SiO x layer with pulsed laser deposition (PLD) technique by varying oxygen partial pressure during deposition. Initial oxygen partial pressure was about 10 −6 mbar followed by 5×10 −4 mbar. High quality YSZ thin film can be successfully fabricated without an amorphous interfacial SiO x layer. The YSZ thin film grows epitaxially on silicon with commensurately crystallized YSZ/Si interface. Superconducting YBCO and ferroelectric PZT thin films deposited on the high quality YSZ thin film show excellent physical and microstructure properties.